| PART |
Description |
Maker |
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| IRFG110 2N7334 2N7334-QR-EB |
1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
14 LEAD DUAL IN LINE QUAD
|
SEMELAB LTD
Seme LAB
|
| SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2N6660C4 2N6660C4A-JQRS |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Seme LAB
SEMELAB LTD
|
| IXFR12N100Q IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| MCH3301 |
1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| SDF12N100GAFEHSN |
12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SOLITRON DEVICES INC
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03 |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10026JFLL |
30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Microsemi, Corp.
|
|
